MBI Staff Member – Personal info

MBI Publications

  1. Ascending Si diffusion into growing GaN nanowires from the SiC/Si substrate: up to the solubility limit and beyond

    V. G. Talalaev, J. W. Tomm, S. A. Kukushkin, A. V. Osipov, I. V. Shtrom, K. P. Kotlyar, F. Mahler, J. Schilling, R. R. Reznik, G. E. Cirlin

    Nanotechnology 31 (2020) 294003/1-8
  2. Dynamics of broadband lasing cascade from a single dot-in-well InGaAs microdisk

    V. Talalaev, N. Kryzhanovskaya, J. W. Tomm, V. Rutckaia, J. Schilling, A. Zhukov

    Scientific Reports 9 (2019) 5635/1-10
  3. Emission kinetics of surface (bi)excitons in ZnO thin films

    I. Kh. Akopyan, M. E. Labzovskaya, B. V. Novikov, V. G. Talalaev, J. W. Tomm, J. Schilling

    Physics of the Solid State 61 (2019) 403-408
  4. Ex post manipulation of barriers in InGaAs tunnel injection devices

    V. G. Talalaev, G. E. Cirlin, B. V. Novikov, B. Fuhrmann, P. Werner, J. W. Tomm

    Applied Physics Letters 106 (2015) 013104/1-5
  5. Effect of nanobridges on the emission spectra of a quantum dot–quantum well tunneling pair

    V. G. Talalaev, G. E. Cirlin, L. I. Goray, B. V. Novikov, M. E. Labzovskaya, J. W. Tomm, P. Werner, B. Fuhrmann, J. Schilling, P. N. Racec

    Semiconductors 48 (2014) 1209–1216
  6. Relaxation pathways of excitation in the tunnel-injection structures with quantum dots

    V. G. Talalaev, A. V. Senichev, B. V. Novikov, J. W. Tomm, L. V. Asryan, N. D. Zakharov, P. Werner, A. D. Bouravleuv, Yu. B. Samsonenko, A. I. Khrebtov, I. P. Soshnikov, G. E. Cirlin

    Vestnik of St. Petersburg University 4 (2012) 34-35
  7. Light-emitting tunnel nanostructures based on quantum dots in the Si and GaAs matrix

    V. G. Talalaev, A. A. Tonkikh, N. D. Zakharov, A. V. Senichev, J. W. Tomm, P. Werner, B. V. Novikov, L. V. Asryan, B. Fuhrmann, J. Schilling, H. S. Leipner, A. D. Bouraulev, Yu. B. Samsonenko, A. I. Khrebtov, I. P. Soshnikov, G. E. Cirlin

    Fizika I Technika Poluprovodnikov 46 (2012) 1492-1503
  8. Light-emitting tunneling nanostructures based on quantum dots in a Si and GaAs matrix

    V. G. Talalaev, A. A. Tonkikh, N. D. Zakharov, A. V. Senichev, J. W. Tomm, P. Werner, B. V. Novikov, L. V. Asryan, B. Fuhrmann, J. Schilling, H. S. Leipner, A. Cirlin

    Semiconductors 46 (2012) 1460 - 1470
  9. Tunnel injection emitter structures with barriers comprising nanobridges

    A. V. Senichev, V. G. Talalaev, J. W. Tomm, N. D. Zakharov, B. V. Novikov, P. Werner, G. E. Cirlin

    Physica Status Solidi-Rapid Research Letters 5 (2011) 385-387
  10. Temperature dependent luminescence from quantum dot arrays: phonon-assisted line broadening versus carrier escape-induced narrowing

    M. B. Smirnov, V. G. Talalaev, B. V. Nowikov, S. V. Sarangov, N. D. Zakharov, P. Werner, U. Gösele, J. W. Tomm, G. E. Cirlin

    physica status solidi (b) 247 (2010) 347-352