MBI Publications

1. Relaxation pathways of excitation in the tunnel-injection structures with quantum dots

   V. G. Talalaev, A. V. Senichev, B. V. Novikov, J. W. Tomm, L. V. Asryan, N. D. Zakharov, P. Werner, A. D. Bouravleuv, Yu. B. Samsonenko, A. I. Khrebtov, I. P. Soshnikov, G. E. Cirlin

   Vestnik of St. Petersburg University 4 (2012) 34-35
2. Light-emitting tunnel nanostructures based on quantum dots in the Si and GaAs matrix

   V. G. Talalaev, A. A. Tonkikh, N. D. Zakharov, A. V. Senichev, J. W. Tomm, P. Werner, B. V. Novikov, L. V. Asryan, B. Fuhrmann, J. Schilling, H. S. Leipner, A. D. Bouraulev, Yu. B. Samsonenko, A. I. Khrebtov, I. P. Soshnikov, G. E. Cirlin

   Fizika I Technika Poluprovodnikov 46 (2012) 1492-1503
3. Light-emitting tunneling nanostructures based on quantum dots in a Si and GaAs matrix

   V. G. Talalaev, A. A. Tonkikh, N. D. Zakharov, A. V. Senichev, J. W. Tomm, P. Werner, B. V. Novikov, L. V. Asryan, B. Fuhrmann, J. Schilling, H. S. Leipner, A. Cirlin

   Semiconductors 46 (2012) 1460 - 1470
4. Tunnel injection emitter structures with barriers comprising nanobridges

   A. V. Senichev, V. G. Talalaev, J. W. Tomm, N. D. Zakharov, B. V. Novikov, P. Werner, G. E. Cirlin

   Physica Status Solidi-Rapid Research Letters 5 (2011) 385-387
5. InGaAs tunnel-injection structures with nanobridges: Excitation transfer and luminescence kinetics

   V. G. Talalaev, A. V. Senichev, B. V. Novikov, J. W. Tomm, T. Elsaesser, N. D. Zakharov, P. Werner, U. Gösele, Yu. B. Samsonenko, G. E. Cirlin

   Semiconductors 44 (2010) 1050-1058

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