MBI Staff Member – Personal info

Research

High-power semiconductor lasers are the most efficient man-made light sources, and can convert more than 80% electric energy into light. Currently emission powers of one kW continuous-wave powers are extracted from a single monolithic semiconductor chip. We are interested in the intrinsic limitations of such optoelectronic devices in terms of output power, beam quality (brightness) and lifetime (reliability). For this purpose, we analyze devices, but also their components such as surfaces and interfaces or gain materials such as quantum wells, superlattices and quantum dots.
For our experiments, we use optical tools, in particular transient spectroscopy that represents a generic competence of MBI. Such work is naturally carried out as collaborative work with device vendors, who provide us with high-quality industry-grade devices and structures. The use of such devices ensures high reproducibility and the chance to get general results, which not depend on the particular device structure that was studied. In BMBF-projects such as BlauLas, we work together with Osram OS (Regensburg), Dilas GmbH (Maiz) and Laserline GmbH (Mülheim) or in the frame of bilateral research contracts with Lumentum (Santa Clara) and 3S-Photonics (Nozay).
The material basis of the investigated devices is now focused to GaN-based wide-bandgap devices emitting in the ultraviolet to blue spectral regions. The figure shows damage patterns as observed in 450-nm emitting high power diode lasers after it experienced the so-called catastrophic optical damage in short-pulse operation.

Subfigure (a) shows the damage patterns at the font facet, where the light leaves the device (red circle), while (b) shows the same region from the side. A channel is visible which burned into the device and ends ~80 µm underneath the front facet; see (c). Subfigure (d) shows the end of this channel in higher resolution. The quantum wells, i.e. the gain medium are well resolved.

 

Curriculum vitae

2018  East China Normal University as ECNU High-End Expert, China

1999  Visitor at the RIKEN-Institute Sendai, Japan

1995 - present: Senior researcher at MBI

1993-1995: Visiting professor at Georgia Tech Atlanta, USA

1986-1989: R&D group leader in a subcontract "Optical characterization of II-VI materials for IR quantum detector fabrication".

1984-1986: R&D work in a subcontract to "Carl Zeiss Jena" company to develop diode lasers for an IR diode laser spectrometer.

1981-1984: PhD student, Dr. rer. nat. in Physics, summa cum laude, Humboldt University, Berlin 1984 Dissertation: Study of the optical properties of n-Pb1-xSnxTe/p-Pb1-xSnxTe/p-PbTe-heterostructures by means of photoluminescence and injection-luminescence.

1977-1982: Physics studies, Diploma in Physics summa cum laude, Humboldt University, Berlin 1982 Thesis: Luminescence properties of lead salts for optical and electrical excitation.

MBI Publications

  1. Time-resolved photoluminescence from n-doped GaN/Al0.18Ga0.82N short-period superlattices probes carrier kinetics and long-term structural stability

    F. Mahler, J. W. Tomm, K. Reimann, M. Woerner, V. Hoffmann, C. Netzel, M. Weyers, T. Elsaesser

    Journal of Applied Physics 125 (2019) 185705/1-7
  2. Visible and near-infrared emission images of (In,Ga,Al)N-based 450 nm emitting diode laser

    J. W. Tomm, R. Kernke, M. Ali, B. Stojetz, A. Lell, H. König

    SPIE Proceedings Series 10939 (2019) 109390J/1-12
  3. Emission kinetics of surface (Bi)excitons in ZnO thin films

    I. Kh. Akopyan, M. E. Labzovskaya, B. V. Novikov, V. G. Talalaev, J. W. Tomm, J. Schilling

    Physics of the Solid State 61 (2019) 403-408
  4. Dynamics of a broadband lasing cascade from a single dot-in-well InGaAs microdisk

    V. Talalaev, N. Kryzhanovskaya, J. W. Tomm, V. Rutckaia, J. Schilling, A. Zhukov

    Scientific Reports 9 (2019) 5635/1-10
  5. Impact of external optical feedback on high-power diode laser lifetime and failure modes

    H. Kissel, J. W. Tomm, B. Köhler, J. Biesenbach

    SPIE Proceedings Series 10900 (2019) 109000S/1-25
  6. By-emitter analysis of 450-nm emitting high-power diode laser bars

    F. Mahler, R. Kernke, J. W. Tomm, H. König, B. Stojetz, M. Ali, A. Lell

    IEEE Journal of Selected Topics in Quantum Electronics Online (2019)
  7. Origin of yellow emissions from (In,Ga,Al)N based 450 nm emitting diode lasers

    R. Kernke, H. Wang, J. Hong, F. Yue, J. Chu, J. W. Tomm

    OSA Continuum 2 (2019) 1496-1501
  8. Catastrophic optical damage of GaN-based diode lasers: sequence of events, damage pattern, and comparison with GaAs-based devices

    J. W. Tomm, R. Kernke, G. Mura, M. Vanzi, M. Hempel, B. Acklin

    Journal of Electronic Materials 47 (2018) 4959-4963
  9. Defect evolution during catastrophic optical damage in 450-nm emitting InGaN/GaN diode lasers

    J. W. Tomm, R. Kernke, A. Löffler, B. Stojetz, A. Lell, H. König

    SPIE Proceedings Series 10553 (2018) 1055308/1-7
  10. Chip-carrier thermal barrier and its impact on lateral thermal lens profile and beam parameter product in high power broad area lasers

    J. Rieprich, M. Winterfeldt, R. Kernke, J. W. Tomm, P. Crump

    Journal of Applied Physics 123 (2018) 125703/1-11

Other Publications

Books

Juan Jiménez and Jens W. Tomm, "Spectroscopic Analysis of Optoelectronic Semiconductors", Springer Series in Optical Sciences Vol. 202 (Springer, 2016).

Jens W. Tomm and Juan Jiménez, "Quantum-Well Laser Array Packaging", Nanoscience and Technology Series (McGraw-Hill, 2007).