Dr. Vadim Talalaev
Nicht mehr am MBI
MBI Publikationen
- Ascending Si diffusion into growing GaN nanowires from the SiC/Si substrate: up to the solubility limit and beyond Nanotechnology 31 (2020) 294003/1-8
- Dynamics of broadband lasing cascade from a single dot-in-well InGaAs microdisk Scientific Reports 9 (2019) 5635/1-10
- Emission kinetics of surface (bi)excitons in ZnO thin films Physics of the Solid State 61 (2019) 403-408
- Ex post manipulation of barriers in InGaAs tunnel injection devices Applied Physics Letters 106 (2015) 013104/1-5
- Effect of nanobridges on the emission spectra of a quantum dot–quantum well tunneling pair Semiconductors 48 (2014) 1209–1216
- Relaxation pathways of excitation in the tunnel-injection structures with quantum dots Vestnik of St. Petersburg University 4 (2012) 34-35
- Light-emitting tunnel nanostructures based on quantum dots in the Si and GaAs matrix Fizika I Technika Poluprovodnikov 46 (2012) 1492-1503
- Light-emitting tunneling nanostructures based on quantum dots in a Si and GaAs matrix Semiconductors 46 (2012) 1460 - 1470
- Tunnel injection emitter structures with barriers comprising nanobridges Physica Status Solidi-Rapid Research Letters 5 (2011) 385-387
- Temperature dependent luminescence from quantum dot arrays: phonon-assisted line broadening versus carrier escape-induced narrowing physica status solidi (b) 247 (2010) 347-352