Max Born Institute for Nonlinear Optics and Short Pulse Spectroscopy
Max Born Institute for Nonlinear Optics and Short Pulse Spectroscopy

MBI Staff Member – Personal info

Dr. Martin Hempel

No longer employed at MBI

MBI Publications

  1. Catastrophic optical damage of GaN-based diode lasers: sequence of events, damage pattern, and comparison with GaAs-based devices

    J. W. Tomm, R. Kernke, G. Mura, M. Vanzi, M. Hempel, B. Acklin

     Journal of Electronic Materials 47 (2018) 4959-4963
  2. Analysis of GaN based high-power diode lasers after singular degradation events

    G. Mura, M. Vanzi, M. Hempel, J. W. Tomm

     Physica Status Solidi-Rapid Research Letters 11 (2017) 1700132/1-6
  3. Shortwave infrared (SWIR) emission from 450 nm InGaN diode lasers

    R. Kernke, M. Hempel, J. W. Tomm, T. Elsaesser, B. Stojetz, H. König, U. Strauß

     Optical Materials Express 6 (2016) 2139-2146
  4. Rapid stress-testing vs. long-term aging: a case study of 980-nm emitting single-spatial mode lasers

    J. W. Tomm , M. Hempel, D. Venables , V. Rossin , E. Zucker, T. Elsaesser

     SPIE Proceedings Series 9733 (2016) 973303/1-6
  5. Assessing the influence of the vertical epitaxial layer design on the lateral beam quality of high-power broad area diode lasers

    M. Winterfeldt , J. Rieprich, S. Knigge, A. Maaßdorf, M. Hempel, R. Kernke, J. W. Tomm, G. Erbert, P. Crump

    SPIE Proceedings Series 9733 (2016) 97330O/1-9
  6. Analysis of 980nm emitting single-spatial mode diode lasers at high power levels by complementary imaging techniques

    M. Hempel, J. W. Tomm, T. Elsaesser, D. Venables, V. Rossin, E. Zucker

     SPIE Proceedings Series 9348 (2015) 93480N /1-6
  7. Kinetics of catastrophic optical damage in GaN-based diode lasers

    M. Hempel, J. W. Tomm, B. Stojetz, H. Koenig, U. Strauss, T. Elsaesser

     Semiconductor Science and Technology 30 (2015) 072001/1-6
  8. Long-term aging and quick stress-testing of 980-nm single-spatial mode lasers

    M. Hempel, J. W. Tomm, D. Venables, V. Rossin, E. Zucker, T. Elsaesser

     Journal of Lightwave Technology 33 (2015) 4450 - 4456
  9. Short-wavelength infrared defect emission as probe for degradation effects in diode lasers

    M. Hempel, J. W. Tomm, F. Yue, M. Bettiati, T. Elsaesser

     SPIE Proceedings Series 9382 (2015) 93821G/1-6
  10. High-power diode lasers under external optical feed-back

    B. Leonhäuser, H. Kissel, J. W. Tomm, M. Hempel, A. Unger, J. Biesenbach

     SPIE Proceedings Series 9348 (2015) 93480M/1-10