MBI-Mitarbeiter - Persönliche Daten

Dr. Martin Hempel

Nicht mehr am MBI

MBI Publikationen

  1. Catastrophic optical damage of GaN-based diode lasers: sequence of events, damage pattern, and comparison with GaAs-based devices

    J. W. Tomm, R. Kernke, G. Mura, M. Vanzi, M. Hempel, B. Acklin

    Journal of Electronic Materials 47 (2018) 4959-4963
  2. Analysis of GaN based high-power diode lasers after singular degradation events

    G. Mura, M. Vanzi, M. Hempel, J. W. Tomm

    Physica Status Solidi-Rapid Research Letters 11 (2017) 1700132/1-6
  3. Transient surface modifications during singular heating events at diode laser facets

    M. Hempel, J. W. Tomm, A. Bachmann, C. Lauer, M. Furitsch, U. Strauss, T. Elsaesser

    Semiconductor Science and Technology 31 (2016) 055007/1-6
  4. Shortwave infrared (SWIR) emission from 450 nm InGaN diode lasers

    R. Kernke, M. Hempel, J. W. Tomm, T. Elsaesser, B. Stojetz, H. König, U. Strauß

    Optical Materials Express 6 (2016) 2139-2146
  5. Rapid stress-testing vs. long-term aging: a case study of 980-nm emitting single-spatial mode lasers

    J. W. Tomm , M. Hempel, D. Venables , V. Rossin , E. Zucker, T. Elsaesser

    SPIE Proceedings Series 9733 (2016) 973303/1-6
  6. Assessing the influence of the vertical epitaxial layer design on the lateral beam quality of high-power broad area diode lasers

    M. Winterfeldt , J. Rieprich, S. Knigge, A. Maaßdorf, M. Hempel, R. Kernke, J. W. Tomm, G. Erbert, P. Crump

    SPIE Proceedings Series 9733 (2016) 97330O/1-9
  7. Analysis of 980nm emitting single-spatial mode diode lasers at high power levels by complementary imaging techniques

    M. Hempel, J. W. Tomm, T. Elsaesser, D. Venables, V. Rossin, E. Zucker

    SPIE Proceedings Series 9348 (2015) 93480N /1-6
  8. Kinetics of catastrophic optical damage in GaN-based diode lasers

    M. Hempel, J. W. Tomm, B. Stojetz, H. Koenig, U. Strauss, T. Elsaesser

    Semiconductor Science and Technology 30 (2015) 072001/1-6
  9. Long-term aging and quick stress-testing of 980-nm single-spatial mode lasers

    M. Hempel, J. W. Tomm, D. Venables, V. Rossin, E. Zucker, T. Elsaesser

    Journal of Lightwave Technology 33 (2015) 4450 - 4456
  10. Short-wavelength infrared defect emission as probe for degradation effects in diode lasers

    M. Hempel, J. W. Tomm, F. Yue, M. Bettiati, T. Elsaesser

    SPIE Proceedings Series 9382 (2015) 93821G/1-6
  11. High-power diode lasers under external optical feed-back

    B. Leonhäuser, H. Kissel, J. W. Tomm, M. Hempel, A. Unger, J. Biesenbach

    SPIE Proceedings Series 9348 (2015) 93480M/1-10
  12. Defect temperature kinetics during catastrophic optical damage in high power diode lasers

    M. Hempel, J. W. Tomm

    SPIE Proceedings Series 9002 (2014) 90021H/1-12
  13. Short-wavelength infrared defect emission as a probe of degradation processes in 980 nm single-mode diode lasers

    M. Hempel, J. W. Tomm, F. Yue, M. A. Bettiati, T. Elsaesser

    Laser & Photonics Reviews 8 (2014) L59-L64
  14. The impact of external optical feedback on the degradation behavior of high-power diode lasers

    M. Hempel, M. Chi, P. M. Petersen, U. Zeimer, M. Weyers, J. W. Tomm

    SPIE Proceedings Series 8605 (2013) 86050L/1-8
  15. Microscopic origins of catastrophic optical damage in diode lasers

    M. Hempel, J. Tomm, F. La Mattina, I. Ratschinski, M. Schade, I. Shorubalko, M. Stiefel, H. Leipner, F. Kießling, T. Elsaesser

    IEEE Journal of Selected Topics in Quantum Electronics 19 (2013) 1500508/1-8
  16. Analysis of bulk and facet failures in AIGaAs-based high-power diode lasers

    J. W. Tomm, M. Hempel, La Mattina, F., F. M. Kießling, T. Elsaesser

    SPIE Proceedings Series 8640 (2013) 86401F/1-10
  17. How does external feedback cause AIGaAs-based diode lasers to degrade?

    M. Hempel, M. Chi, P. M. Petersen, U. Zeimer, J. W. Tomm

    Applied Physics Letters 102 (2013) 023502/1-4
  18. Defect mechanisms in diode lasers at high optical output power: The catastrophic optical damage

    M. Hempel

    Dissertation Humboldt-Universität zu Berlin (2013)
  19. Comparison of catastrophic optical damage in InP/(AI)GaInP quantum dot and quantum well diode lasers

    S. N. Elliott, M. Hempel, S. Shutts, U. Zeimer, P. M. Smowton, J. W. Tomm

    SPIE Proceedings Series 8640 (2013) 86401H/1-9
  20. Catastrophic optical bulk damage in InP 7xx emitting quantum dot diode lasers

    S. N. Elliott, M. Hempel, U. Zeimer, P. M. Smowton, J. W. Tomm

    Semiconductor Science and Technology 27 (2012) 102001/1-4