How fast is the electrical resistance?

Researchers at the Max Born Institute in Berlin observed the extremely rapid development of electrical resistance in a semiconductor by tracking the movement of electrons in real time.

When you first heard of electric current, you may have wondered how the electrons in a solid move from negative to positive. In principle, it is possible for the electrons to "fly" through the solid without being affected by the atoms or other charges in the material. Under normal conditions, this does not happen because the electrons collide with the vibrating nuclei or with impurities. Typically, such shocks happen after an extremely short time, about 100 femtoseconds (10-13 seconds, one tenth of a trillionth of a second). Thus, the movement of electrons in the material is like a movement through a dense crowd, not like a run along an empty street. Therefore, a typical electron velocity is only 1 m / h (not km / h!), Slower than a snail.

Although the electrons abut very often in the material, such impacts take a finite time. When you push yourself through a crowd, there are sometimes small empty areas where you can go faster. If you observe the electrons moving on a very fast (femtosecond) time scale, you would expect the electrons to fly undisturbed through the material for a very short time after turning on the battery before they hit anything. That's exactly what researchers at the Max Born Institute in Berlin recently did, and what they're reporting on in the latest issue of Physical Review Letters [Volume 107, 256602 (2011)]. Extremely short pulses of terahertz of light (1 terahertz = 1012 Hz, 1 trillion oscillations per second) were used instead of a battery (light has an electric field like a battery) to accelerate optically generated free electrons in a piece of gallium arsenide. The accelerated electrons in turn generate another electric field. If you measure this field with femtosecond time resolution, you can see exactly what the electrons are doing. The researchers saw that the electrons were accelerated undisturbed immediately after switching on the electric field, whereas the impact was only noticeable after about 300 femtoseconds.

In the attached movie we show what happens in the gallium arsenide crystal. Electrons (blue balls) and holes (red balls) show random heat movements before the terahertz pulse hits the sample. The electric field (green arrow) accelerates electrons and holes in opposite directions. In the emergence of electrical resistance, this movement is slowed down. This leads to a heated electron-hole gas, that is, to a faster thermal movement.

These experiments allowed the researchers to determine which type of impact is mainly responsible for electrical resistance. Interestingly, they found out that the most important colliding partners are not atomic vibrations, but positively charged particles called holes. A hole or hole is an empty electron state in the valence band of the semiconductor; it has a positive charge and about 6 times the mass of the electron. The optical excitation of a semiconductor simultaneously generates free electrons and holes. These are moved in opposite directions by the terahertz pulse, our battery. Since the holes have a much larger mass compared to the electrons, they move only slowly, but they are in the way of the electrons, which slows them down.

The understanding of the processes leading to the deceleration of electrons can lead to more efficient and faster electronics in the future and perhaps to new tricks to reduce the electrical resistance.

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A1-P-2025.01
Melting, bubblelike expansion, and explosion of superheated plasmonic nanoparticles

S. Dold, T. Reichenbach, A. Colombo, J. Jordan, I. Barke, P. Behrens, N. Bernhardt, J. Correa, S. Düsterer, B. Erk, T. Fennel, L. Hecht, A. Heilrath, R. Irsig, N. Iwe, P. Kolb, B. Kruse, B. Langbehn, B. Manschwetus, P. Marienhagen, F. Martinez, K.-H. Meiwes-Broer, K. Oldenburg, C. Passow, C. Peltz, M. Sauppe, F. Seel, R. M. P. Tanyag, R. Treusch, A. Ulmer, S. Walz, M. Moseler, T. Möller, D. Rupp, B. v. Issendorff

Physical review letters 134 (2025) 136101/1-7

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A3-P-2025.01
Second-harmonic generation in OP-GaAs0.75P0.25 heteroepitaxially grown from the vapor phase

L. Wang, S. R. Vangala, S. Popien, M. Beutler, J. M. Mann, V. L. Tassev, E. Büttner, V. Petrov

CrystEngComm 27 (2025) 1373-1376

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A3-P-2025.02
Diode-pumped Kerr-lens mode-locked Yb:MgWO4 laser

H.-Y. Nie, Z.-L. Lin, P. Loiko, H.-J. Zeng, L. Zhang, Z. Lin, G. Z. Elabedine, X. Mateos, V. Petrov, G. Zhang, W. Chen

Optics Letters 50 (2025) 1049-1052

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A3-P-2025.03
Growth, anisotropy, and spectroscopy of Tm3+ and Yb3+ doped MgWO4 crystals

G. Z. Elabedine, R. M. Solé, S. Slimi, M. Aguiló, F. Díaz, W. Chen, V. Petrov, X. Mateos

CrystEngComm 27 (2025) 1619-1631

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A3-P-2025.04
Growth, structure, spectroscopic, and laser properties of Ho-doped yttrium gallium garnet crystal

S. Slimi, H. Yu, H. Zhang, C. Kränkel, P. Loiko, R. M. Solé, M. Aguiló, F. Díaz, W. Chen, U. Griebner, V. Petrov, X. Mateos

Optics Express 33 (2025) 2529-2541

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A3-P-2025.05
Growth, spectroscopy and laser operation of disordered Tm,Ho:NaGd (MoO4)2 crystal

G. Z. Elabedine, Z. Pan, P. Loiko, H. Chu, D. Li, K. Eremeev, K. Subbotin, S. Pavlov, P. Camy, A. Braud, S. Slimi, R. M. Solé, M. Aguiló, F. Díaz, W. Chen, U. Griebner, V. Petrov, X. Mateos

Journal of Alloys and Compounds 1020 (2025) 179211/1-12

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A3-P-2025.06
Kerr-lens mode-locked, diode-pumped Yb,Gd:YAP laser generating 23 fs pulses

H.-Y. Nie, P. Zhang, P. Loiko, Z.-L. Lin, H.-J. Zeng, G. Zhang, Z. Li, X. Mateos, H.-C. Liang, V. Petrov, Z. Chen, W. Chen

Optics Express 33 (2025) 11793-11799

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A3-P-2025.07
Nanoindentation and laser-induced optical damage tests of CdSe nonlinear crystals

G. Exner, A. Carpenter, K. Cissner, A. Hildenbrand-Dhollande, S. Schmitt, A. Grigorov, M. Piotrowski, S. Guha, V. Petrov

Journal of the Optical Society of America B 42 (2025) A10-A14

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A3-P-2025.08
Phase-matching properties of AgGa(Se1-xTex)2 for SHG of a CO2 laser

K. Kato, V. Petrov, K. Miyata

Proceedings of SPIE 13347 (2025) 133470S/1-4

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A3-P-2025.09
Phase-matching properties of ZnSiAs2 in the mid-IR

T. Okamoto, N. Umemura, K. Kato, V. Petrov

Proceedings of SPIE 13347 (2025) 133470C/1-5

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A3-P-2025.10
Direct generation of 3.5 optical-cycle pulses from a rare-earth laser

N. Zhang, Y. Wang, H. Ding, F. Liang, Y. Zhao, J. Xu, H. Yu, H. Zhang, V. Petrov

Optics Letters 50 (2025) 3150-3153

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A3-P-2025.11
Power scaling of a non-resonant optical parametric oscillator based on periodically poled LiNbO3 with spectral narrowing

S. Das, T. Temel, G. Spindler, A. Schirrmacher, I. B. Divliansky, R. T. Murray, M. Piotrowski, L. Wang, W. Chen, O. Mhibik, V. Petrov

Optics Express 33 (2025) 5662-5669

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A3-P-2025.12
Sub-40-fs diode-pumped ytterbium-doped mixed rare-earth calcium oxoborate laser

H.-J. Zeng, Z.-L. Lin, H. Lin, P. Loiko, L. Zhang, Z. Lin, H.-C. Liang, X. Mateos, V. Petrov, G. Zhang, W. Chen

Optics Express 33 (2025) 17965-17975

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A3-P-2025.13
Spectroscopy and SESAM mode-locking of a disordered Yb:Gd2SrAl2O7 crystal

H.-J. Zeng, Z.-L. Lin, P. Loiko, F. Yuan, G. Zhang, Z. Lin, X. Mateos, V. Petrov, W. Chen

Optics Express 33 (2025) 15057-15066

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A3-P-2025.14
Watt-level, 1.6 ps χ(2)-lens mode-locking of an in-band pumped Nd:LuVO4 laser

H. Iliev, V. Aleksandrov, V. Petrov, L. S. Petrov, H. Zhang, H. Yu, I. Buchvarov

Optics Express 33 (2025) 17773-17781

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A3-P-2025.15
Refined phase-matching predictions for AgGa1-xInxS2 mixed chalcopyrite crystals

K. Kato, K. Miyata, V. Petrov

Journal of the Optical Society of America B 42 (2025) A6-A9

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A3-P-2025.16
35-fs diode-pumped mode-locked ytterbium-doped multi-component alkaline-earth fluoride laser

Z. Zhang, Z.-Q. Li, P. Loiko, H.-J. Zeng, G. Zhang, Z.-L. Lin, S. Normani, A. Braud, F. Ma, X. Mateos, H.-C. Liang, V. Petrov, D. Jiang, L. Su, W. Chen

Optics Letters 50 (2025) 1835-1838

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A3-P-2025.17
Diode-pumped few-optical-cycle laser based on an ytterbium-doped disordered strontium yttrium borate crystal

H. Zeng, Z. Lin, S. Sun, P. Loiko, H. Lin, G. Zhang, Z. Lin, C. Mou, X. Mateos, V. Petrov, W. Chen

Optics Letters 50 (2025) 2203-2206

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A3-P-2025.18
Refined Sellmeier and thermo-optic dispersion formulas for CdGeAs2

K. Kato, K. Miyata, V. Petrov

Journal of the Optical Society of America B 42 (2025) A24-A28

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A3-P-2025.19
Diode-pumped mode-locked Yb:Ca3La2(BO3)4 laser generating 35 fs pulses

H.-J. Zeng, Z.-L. Lin, G. Zhang, Z. Pan, P. Loiko, X. Mateos, V. Petrov, H. Lin, W. Chen

Optics Express 33 (2025) 22988-22996

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