Dr. Uwe Griebner
uwe.griebner(at)mbi-berlin.de
+49 30 6392 1457
C2: Solid State Light Sources
Haus C, 2.22

Position
Project Coordinator 4.1: Implementation of Lasers and Measuring Techniques
Research
Development of advanced ultrashort pulse lasers, amplifiers, and parametric devices operating in the near- and mid-IR wavelength ranges including components and complete systems for direct implementation within other projects at MBI.
An example is the development of novel CPA laser sources emitting around 2 µm wavelength. This laser system operating at kilohertz repetition rate will serve as driver for OPCPA in the mid-IR. Figure (a) shows the simulated bifurcation diagram of a Ho:YLF regenerative amplifier (RA) at a 1 kHz repetition rate and 24 round trips indicating the most interesting operation regimes, i.e., stable double-pulsing (yellow coded bar) and the single-energy regime (green coded bar) beyond the final bifurcation point (BP final). Based on our model the RA is designed for operation in the single-energy regime beyond BPfinal. The measured complete RA bifurcation diagram of the re-designed RA at 1 kHz and 24 round trips is presented in Fig. (b). It agrees well with our numerical simulations [Fig. (a)]. Only the predicted multi-pulsing between 20 and 30 W pump power is less pronounced in the experiment. The highest pulse energy of 12 mJ can be extracted in the stable double-pulsing regime in the upper bifurcation branch (yellow coded bar), however at 0.5 kHz, the half of the repetition rate. BPfinal appears at a pump power of 47 W and denotes the transition to the single-energy regime where any multi-stabilities and chaotic behavior have been overcome. The extracted RA pulse energy of 9.7 mJ is the by far highest reported for 2-µm RAs operating in the single-energy regime. Taking into account the applied pump power of 50 W, the extraction efficiency is as high as 19.5%. Performing the transition from the stable double-pulsing to the single-energy regime, the RA’s pulse-to-pulse stability is further improved with a rms value <0.5%. Figure (c) shows the corresponding pulse stability measurement in the vicinity of BPfinal and beyond in the single-energy regime (green coded bar).
Curriculum vitae
since 1992 Max Born Institute for Nonlinear Optics and Short Pulse Spectroscopy, Berlin, Germany, staff scientist and project coordinator.
1993 - 1996 Ph.D. thesis at the Optical Institute, Technical University Berlin, Germany, with Prof. Horst Weber,
Title of thesis: Fiber bundle lasers with high average power,
1989 - 1992 Institute of Nonlinear Optics and Short Pulse Spectroscopy, Berlin, Germany, staff scientist,
1986 - 1989 Institute of Mechanics, Chemnitz, Germany, staff scientist,
1981 - 1986 Diploma degree in Physics; Physics Department, University of Jena, Germany,
Title of thesis: Characterization of lattice distorsions in LiF crystals,
MBI Publikationen
- Sub-100-fs Cr:YAG laser mode-locked by monolayer graphene saturable absorber Optics Letters 38 (2013) 1745-1747
- Mode-locking of solid-state lasers by single-walled carbon-nanotube based saturable absorbers Quantum Electronics 42 (2012) 663-670
- Femtosecond pulses near 2 µm from a Tm:KLuW laser mode-locked by a single-walled carbon nanotube saturable absorber Applied Physics Express 5 (2012) 092704/1-3
- 175 fs Tm:Lu2O3 laser at 2.07 µm mode-locked using single-walled carbon nanotubes Optics Express 20 (2012) 5313-5318
- Diode-pumped 2 µm vibronic (Tm3+,Yb3+):KLu(WO4)2 laser Applied Optics 51 (2012) 2701-2705
- Graphene mode-locked femtosecond Yb:KLuW laser Applied Physics Letters 101 (2012) 161112/1-4
- Passive Q-switching of a diode-pumped (Tm,Yb):KLu(WO4)2 laser near 2-mm with a Cr2+:ZnS saturable absorber SPIE Proceedings Series 8235 (2012) 82351U/1-8
- Passively Q-switched Tm:YLF laser Optics Letters 37 (2012) 1517-1519
- Passive Q-switching of the diode pumped Tm3+:KLu(WO4)2 laser near 2-mm with Cr2+:ZnS saturable absorbers Optics Express 20 (2012) A3394-A3400
- Crystal growth, characterization and thin disk laser operation of KLu1-xTmx(WO4)2/KLu(WO4)2 epitaxial layers CrystEngComm 14 (2012) 223-229