MBI-Mitarbeiter - Persönliche Daten

MBI Publikationen

  1. Spectroscopic analysis of packaging concepts for high-power diode laser bars

    M. Hempel, M. Ziegler, S. Schwirzke-Schaaf, J. W. Tomm, D. Jankowski, D. Schroeder

    Applied Physics A 107 (2012) 371-377
  2. Extrinsic contributions to photocurrents from quantum-wells

    R. Giri, S. Schwirzke-Schaaf, J. W. Tomm

    Journal of Applied Physics 108 (2010) 013103/1-6
  3. Defect investigation and temperature analysis of high-power AlGaInP laser diodes during catastrophic optical damage

    M. B. Sanayeh, P. Brick, W. Schmid, B. Mayer, M. Müller, M. Reufer, K. Streubel, S. Schwirzke-Schaaf, J. W. Tomm, A. Danilewsky, G. Bacher

    Journal of Materials Science: Materials in Electronics 19 (2008) S155-S159
  4. Gradual degradation of red-emitting high-power diode laser bars

    M. Ziegler, T. Q. Tien, S. Schwirzke-Schaaf, J. W. Tomm, B. Sumpf, G. Erbert, M. Oudart, J. Nagle

    Applied Physics Letters 90 (2007) 171113/1-3
  5. Relaxation of packaging-induced strains in AlGaAs-based high-power diode laser arrays

    Q.T. Tien, A. Gerhardt, S. Schwirzke-Schaaf, J.W. Tomm, H. Müntz, J. Biesenbach, M. Oudart, J. Nagle, M.L. Biermann

    Applied Physics Letters 86 (2005) 101911/1-3
  6. Screening of high-power diode laser bars by optical scanning

    T.Q. Tien, A. Gerhardt, S. Schwirzke-Schaaf, J.W. Tomm, M. Pommiés, M. Avella, J. Jiménez, M. Oudart, J. Nagle

    Applied Physics Letters 87 (2005) 211110/1-3
  7. Simultaneous quantitative determination of strain and defect profiles within the active region along high-power diode laser bars by micro-photocurrent mapping

    A. Gerhardt, J.W. Tomm, S. Schwirzke-Schaaf, J. Nagle, M. Oudart, Y. Sainte-Marie

    The European Physical Journal - Applied Physics 27 (2004) 451-454
  8. Automated high-accuracy measuring system for specular micro-reflectivity

    R. Grunwald, S. Nerreter, J.W. Tomm, S. Schwirzke-Schaaf, F. Dörfel

    SPIE Proceedings 4449 (2001) 111-118