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A3-P-1994.08
Laser-induced breakdown by impact ionization in SiO2 with pulse widths from 7 ns - 150 fs

D. Du, X. Lin, G. Korn, J. Squier, G. Mourou

Appl. Phys. Lett. 64 (1994) 3071-3073

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A1-P-1993.10
Comment on "Crystal Growth of C60 thin Films on Layered Substrates"

H. Gaber

Appl. Phys. Lett. 65 (1994) 378

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C3-P-1999.06
Femtosecond near-field spectroscopy of a single GaAs quantum wire

T. Guenther, V. Emiliani, F. Intonti, C. Lienau, T. Elsaesser, R. Nötzel, K. H. Ploog

Appl. Phys. Lett. 75 (1999) 3500-3502

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A3-P-1994.04
High repetition rate traveling wave optical parametric generator producing nearly bandwidth limited 50 fs infrared light pulses

V. Petrov, F. Seifert, F. Noack

Appl. Phys. Lett. 65 (1994) 268-270

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C2-P-1998.04
Direct spectroscopic measurement of thermally induced strain in high-power optoelectronic devices

J.W. Tomm, R. Müller, A. Bärwolff, T. Elsaesser, D. Lorenzen, F.X. Daiminger, A. Gerhardt, J. Donecker

Appl. Phys. Lett. 73 (1998) 3908-3910

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C3-P-1998.04
Exciton transport into a single GaAs quantum wire studied by picosecond near-field optical spectroscopy

A. Richter, M. Süptitz, D. Heinrich, Ch. Lienau, T. Elsaesser, M. Ramsteiner, R. Nötzel, K.H. Ploog

Appl. Phys. Lett. 73 (1998) 2176-2178

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C2-P-1997.05
Aging properties of high power laser diode arrays analyzed by fourier-transform photocurrent measurements

J.W. Tomm, A. Jaeger, A. Bärwolff, T. Elsaesser

Appl. Phys. Lett. 71 (1997) 2233-2235

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C3-P-1996.13
Optical near-field photocurrent spectroscopy - a new technique for analyzing microscopic aging processes in optoelectronic devices

A. Richter, J.W. Tomm, C. Lienau, J. Luft

Appl. Phys. Lett. 69 (1996) 3981-3983

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C3-P-1996.17
Investigations of the structural stability of highly strained [(Al)GaIn]As/Ga(PAs) multiple quantum wells

T. Marschner, S. Lutgen, M. Volk, W. Stolz, E.O. Göbel

Appl. Phys. Lett. 69 (1996) 2249-2251

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C3-P-1996.05
Near-field scanning optical microscopy of polarization bistable laser diodes

Ch. Lienau, A. Richter, A. Klehr, T. Elsaesser

Appl. Phys. Lett. 69 (1996) 2471-2473

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C3-P-1996.03
Light-induced expansion of fiber tips in near-field scanning optical microscopy

C. Lienau, A. Richter, T. Elsaesser

Appl. Phys. Lett. 69 (1996) 325-327

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C3-P-1999.12
Large electrically induced transmission changes of GaAs/AlGaAs quantum cascade structures

F. Eickemeyer, R. A. Kaindl, M. Woerner, T. Elsaesser, S. Barbieri, P. Kruck, C. Sirtori, J. Nagle

Appl. Phys. Lett. 76 (2000) 3254-3256

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B1-P-2003.19
MeV-proton emission from ultrafast laser-driven microparticles

M. Schnürer, S. Ter-Avetisyan, S. Busch, M. P. Kalashnikov, E. Risse, W. Sandner, P. V. Nickles

Appl. Phys. B-Lasers O. 78 (2004) 895-899

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A3-P-1993.06
Theory of passive mode-locking of colour-center lasers by a fast saturable absorber

V. Petrov, F. Seifert

Appl. Phys. B 57 (1993) 359-

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A3-P-1994.18
Femtosecond time resolved reflection second-harmonic generation on polycrystalline copper

J. Hohlfeld, D. Grosenick, U. Conrad, E. Matthias

Appl. Phys. A 60 (1995) 137-142

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C1-P-1994.03
Interferometric coherent Raman spectroscopy with incoherent light: Some applications

S.A. Schaertel, A.C. Albrecht, A. Lau, A. Kummrow

Appl. Phys. 59 (1994) 377-387

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A3-P-1994.05
Visible optical parametric generator producing nearly bandwidth limited femtosecond light pulses at 1 kHz repetitions rate

V. Petrov, F. Seifert, F. Noack

Appl. Opt. 33 (1994) 6988-6991

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A3-P-1995.02
Ultrafast Kerr demultiplexing up to 460 Gbits/s in short optical fibers

O. Dühr, F. Seifert, V. Petrov

Appl. Opt. 34 (1995) 5297-5300

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C2-P-1998.02
Short-length 10 W cw neodymium-doped M-profile fiber laser

P. Glas, M. Naumann, A. Schirrmacher, S. Unger, T. Pertsch

Appl. Opt. 37 (1998) 8434-8437

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A3-P-1996.09
Seeded femtosecond optical parametric amplification in the mid-infrared spectral region above 3 mm

V. Petrov, F. Noack, R. Stolzenberger

Appl. Opt. 36 (1997) 1164-1172

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