Search publications of MBI
Publications
A3-P-2021.04
Refined Sellmeier equations for AgGaSe2 up to 18 µm
Applied Optics
60
(2021) 805-808
C3-P-1996.23
Ge/Si(100) heterostructures: a photoemission and low-energy yield spectroscopy investigation
Appl. Surf. Science
102
(1996) 94-97
C3-P-1996.24
Low-energy yield spectroscopy determination of band offsets: application to the Ge/Si(100) heterostructure
Appl. Surf. Science
104
(1996) 595-600
A1-P-1992.03
Time-resolved absorption studies of excimer laser ablation of CaF2
Appl. Surf. Sci.
69
(1993) 180-184
A1-P-1993.09
Hard Amorphous Carbon Coatings on Soft Epitaxial Fullerite Films by Fullerene Beam Deposition
Appl. Phys. Lett.
64
(1994) 43-45
C3-P-1999.03
Broadband phasematched difference frequency mixing of femtosecond pulses in GaSe: experiment and theory
Appl. Phys. Lett.
75
(1999) 1060-1062
C2-P-1993.01
Gigahertz switching behavior of polarization-bistable InGaAsP/InP lasers under high-frequency current modulation
Appl. Phys. Lett.
64
(1994) 830-832
A3-P-1994.08
Laser-induced breakdown by impact ionization in SiO2 with pulse widths from 7 ns - 150 fs
Appl. Phys. Lett.
64
(1994) 3071-3073
A1-P-1993.10
Comment on "Crystal Growth of C60 thin Films on Layered Substrates"
Appl. Phys. Lett.
65
(1994) 378
C3-P-1999.06
Femtosecond near-field spectroscopy of a single GaAs quantum wire
Appl. Phys. Lett.
75
(1999) 3500-3502
A3-P-1994.04
High repetition rate traveling wave optical parametric generator producing nearly bandwidth limited 50 fs infrared light pulses
Appl. Phys. Lett.
65
(1994) 268-270
C2-P-1998.04
Direct spectroscopic measurement of thermally induced strain in high-power optoelectronic devices
Appl. Phys. Lett.
73
(1998) 3908-3910
C3-P-1998.04
Exciton transport into a single GaAs quantum wire studied by picosecond near-field optical spectroscopy
Appl. Phys. Lett.
73
(1998) 2176-2178
C2-P-1997.05
Aging properties of high power laser diode arrays analyzed by fourier-transform photocurrent measurements
Appl. Phys. Lett.
71
(1997) 2233-2235
C3-P-1996.13
Optical near-field photocurrent spectroscopy - a new technique for analyzing microscopic aging processes in optoelectronic devices
Appl. Phys. Lett.
69
(1996) 3981-3983
C3-P-1996.17
Investigations of the structural stability of highly strained [(Al)GaIn]As/Ga(PAs) multiple quantum wells
Appl. Phys. Lett.
69
(1996) 2249-2251
C3-P-1996.05
Near-field scanning optical microscopy of polarization bistable laser diodes
Appl. Phys. Lett.
69
(1996) 2471-2473
C3-P-1996.03
Light-induced expansion of fiber tips in near-field scanning optical microscopy
Appl. Phys. Lett.
69
(1996) 325-327
C3-P-1999.12
Large electrically induced transmission changes of GaAs/AlGaAs quantum cascade structures
Appl. Phys. Lett.
76
(2000) 3254-3256
B1-P-2003.19
MeV-proton emission from ultrafast laser-driven microparticles
Appl. Phys. B-Lasers O.
78
(2004) 895-899