MBI-Mitarbeiter - Persönliche Daten

Dr. Martin Hempel

Nicht mehr am MBI

MBI Publikationen

  1. Near-field evolution in strongly pumped broad area diode lasers

    M. Hempel, J. W. Tomm, M. Baeumler, H. Konstanzer, J. Mukherjee, T. Elsaesser

    SPIE Proceedings Series 8277 (2012) 82771H/1-8
  2. Near-field characteristics of broad-area diode lasers during catastrophic optical damage failure

    M. Hempel, J. W. Tomm, M. Baeumler, H. Konstanzer, J. Mukherjee, T. Elsaesser

    SPIE Proceedings Series 8432 (2012) 84320O/1-7
  3. High single-spatial-mode pulsed power from 980 nm emitting diode lasers

    M. Hempel, J. W. Tomm, T. Elsaesser, M. Bettiati

    Applied Physics Letters 101 (2012) 191105/1-5
  4. Time-resolved reconstruction of defect creation sequences in diode lasers

    M. Hempel, J. W. Tomm, V. Hortelano, N. Michel, J. Jiménez, M. Krakowski, T. Elsaesser

    Laser & Photonics Reviews 6 (2012) L15-L19
  5. Defect propagation in broad-area diode lasers

    M. Hempel, J. W. Tomm, U. Zeimer, T. Elsaesser

    Materials Science Forum 725 (2012) 101-104
  6. Spectroscopic analysis of packaging concepts for high-power diode laser bars

    M. Hempel, M. Ziegler, S. Schwirzke-Schaaf, J. W. Tomm, D. Jankowski, D. Schroeder

    Applied Physics A 107 (2012) 371-377
  7. Emission properties of diode laser bars during pulsed high-power operation

    M. Olecki, J. W. Tomm, M. Hempel, P. Hennig, T. Elsaesser

    SPIE Proceedings Series 8241 (2012) 82410/1-6
  8. Kinetics of defect propagation during the catastophic optical damage (COD) in broad-area diode lasers

    J. W. Tomm, M. Hempel, T. Elsaesser

    Materials Science Forum 725 (2012) 105-108
  9. Defect evolution during catastrophic optical damage of diode lasers

    M. Hempel, La Mattina, F., J. W. Tomm, U. Zeimer, R. Broennimann, T. Elsaesser

    Semiconductor Science and Technology 26 (2011) 075020/1-10
  10. Near-field dynamics of broad area diode laser at very high pump levels

    M. Hempel, J. W. Tomm, M. Baeumler, H. Konstanzer, J. Mukherjee, T. Elsaesser

    AIP Advances 1 (2011) 042148/1-6