MBI-Mitarbeiter - Persönliche Daten


High-power semiconductor lasers are the most efficient man-made light sources, and can convert more than 80% electric energy into light. Currently emission powers of one kW continuous-wave powers are extracted from a single monolithic semiconductor chip. We are interested in the intrinsic limitations of such optoelectronic devices in terms of output power, beam quality (brightness) and lifetime (reliability). For this purpose, we analyze devices, but also their components such as surfaces and interfaces or gain materials such as quantum wells, superlattices and quantum dots.
For our experiments, we use optical tools, in particular transient spectroscopy that represents a generic competence of MBI. Such work is naturally carried out as collaborative work with device vendors, who provide us with high-quality industry-grade devices and structures. The use of such devices ensures high reproducibility and the chance to get general results, which not depend on the particular device structure that was studied. In BMBF-projects such as BlauLas, we work together with Osram OS (Regensburg), Dilas GmbH (Maiz) and Laserline GmbH (Mülheim) or in the frame of bilateral research contracts with Lumentum (Santa Clara) and 3S-Photonics (Nozay).
The material basis of the investigated devices is now focused to GaN-based wide-bandgap devices emitting in the ultraviolet to blue spectral regions. The figure shows damage patterns as observed in 450-nm emitting high power diode lasers after it experienced the so-called catastrophic optical damage in short-pulse operation.

Subfigure (a) shows the damage patterns at the font facet, where the light leaves the device (red circle), while (b) shows the same region from the side. A channel is visible which burned into the device and ends ~80 µm underneath the front facet; see (c). Subfigure (d) shows the end of this channel in higher resolution. The quantum wells, i.e. the gain medium are well resolved.


Curriculum vitae

2018  East China Normal University as ECNU High-End Expert, China

1999  Visitor at the RIKEN-Institute Sendai, Japan

1995 - present: Senior researcher at MBI

1993-1995: Visiting professor at Georgia Tech Atlanta, USA

1986-1989: R&D group leader in a subcontract "Optical characterization of II-VI materials for IR quantum detector fabrication".

1984-1986: R&D work in a subcontract to "Carl Zeiss Jena" company to develop diode lasers for an IR diode laser spectrometer.

1981-1984: PhD student, Dr. rer. nat. in Physics, summa cum laude, Humboldt University, Berlin 1984 Dissertation: Study of the optical properties of n-Pb1-xSnxTe/p-Pb1-xSnxTe/p-PbTe-heterostructures by means of photoluminescence and injection-luminescence.

1977-1982: Physics studies, Diploma in Physics summa cum laude, Humboldt University, Berlin 1982 Thesis: Luminescence properties of lead salts for optical and electrical excitation.

MBI Publikationen

  1. Evidence for “dark charge” from photoluminescence measurements in wide InGaN quantum wells

    A. Bercha, W. Trzeciakowski, G. Muzioł, J. W. Tomm, T. Suski

    Optics Express 31 (2023) 3227-3236
  2. Spatially resolved degradation effects in UVB LEDs stressed by constant current operation

    J. Ruschel, J. W. Tomm, J. Glaab, T. Kolbe, A. Knauer, J. Rass, N. Lobo-Ploch, T. A. Musengezi, S. Einfeldt

    Applied Physics Letters 122 (2023) 131103/1-6
  3. Robust Si/Ge heterostructure metasurfaces as building blocks for wavelength-selective photodetectors

    J. Schlipf, F. Berkmann, Y. Yamamoto, M. Reichenbach, M. Veleski, Y. Kawaguchi, F. Mörz, J. W. Tomm, D. Weißhaupt, I. A. Fischer

    Applied Physics Letters 122 (2023) 121701/1-7
  4. Efficient electronic excitation transfer via phonon-assisted dipole-dipole coupling in Fe2+∶Cr2+:ZnSe

    G. Steinmeyer, J. W. Tomm, P. Fuertjes, U. Griebner, S. S. Balabanov, T. Elsaesser

    Physical Review Applied 19 (2023) 054043/1-11
  5. Excitation transfer from Cr2+ to Fe2+ ions in co-doped ZnSe as a pumping scheme for infrared solid-state lasers

    J. W. Tomm, G. Steinmeyer, P. Fuertjes, U. Griebner, T. Elsaesser

    Journal of Electronic Materials 52 (2023) 5166-5171
  6. Mechanisms limiting the operation time of UVB Al(In)GaN quantum well light emitters

    J. W. Tomm, J. Ruschel, H. K. Cho, S. Einfeldt

    SPIE Proceedings Series 12440 (2023) 1244008/1-5
  7. Recombination in polar InGaN/GaN LED structures with wide quantum wells

    J. W. Tomm, A. Bercha, G. Muzioł, J. Piprek, W. Trzeciakowski

    Physica Status Solidi-Rapid Research Letters 17 (2023) 2300027/1-6
  8. Monolithic integration of InP nanowires with CMOS fabricated silicon nanotips wafer

    A. Kamath, O. Skibitzki, D. Spirito, S. Dadgostar, I. Mediavilla Martinez, M. Schmidbauer, C. Richter, A. Kwasniewski, J. Serrano, J. Jimenez, C. Golz, M. A. Schubert, J. W. Tomm, G. Niu, F. Hatami

    Physical Review Materials 7 (2023) 103801/1-11
  9. Kinetics of excitation transfer from Cr2+ to Fe2+ ions in co-doped ZnSe

    P. Fuertjes, J. W. Tomm, U. Griebner, G. Steinmeyer, S. S. Balabanov, E. M. Gavrishchuk, T. Elsaesser

    Optics Letters 47 (2022) 2129-2131
  10. Stimulated emission at 1.54 μm from erbium/oxygen-doped silicon-based light-emitting diodes

    J. Hong, H. Wen, J. He, J. Liu, Y. Dan, J. W. Tomm, F. Yue, J. Chu, C. Duan

    Photonics Research 9 (2021) 714-721

Andere Publikationen


Juan Jiménez and Jens W. Tomm, "Spectroscopic Analysis of Optoelectronic Semiconductors", Springer Series in Optical Sciences Vol. 202 (Springer, 2016).

Jens W. Tomm and Juan Jiménez, "Quantum-Well Laser Array Packaging", Nanoscience and Technology Series (McGraw-Hill, 2007).