MBI-Mitarbeiter - Persönliche Daten


High-power semiconductor lasers are the most efficient man-made light sources, and can convert more than 80% electric energy into light. Currently emission powers of one kW continuous-wave powers are extracted from a single monolithic semiconductor chip. We are interested in the intrinsic limitations of such optoelectronic devices in terms of output power, beam quality (brightness) and lifetime (reliability). For this purpose, we analyze devices, but also their components such as surfaces and interfaces or gain materials such as quantum wells, superlattices and quantum dots.
For our experiments, we use optical tools, in particular transient spectroscopy that represents a generic competence of MBI. Such work is naturally carried out as collaborative work with device vendors, who provide us with high-quality industry-grade devices and structures. The use of such devices ensures high reproducibility and the chance to get general results, which not depend on the particular device structure that was studied. In BMBF-projects such as BlauLas, we work together with Osram OS (Regensburg), Dilas GmbH (Maiz) and Laserline GmbH (Mülheim) or in the frame of bilateral research contracts with Lumentum (Santa Clara) and 3S-Photonics (Nozay).
The material basis of the investigated devices is now focused to GaN-based wide-bandgap devices emitting in the ultraviolet to blue spectral regions. The figure shows damage patterns as observed in 450-nm emitting high power diode lasers after it experienced the so-called catastrophic optical damage in short-pulse operation.

Subfigure (a) shows the damage patterns at the font facet, where the light leaves the device (red circle), while (b) shows the same region from the side. A channel is visible which burned into the device and ends ~80 µm underneath the front facet; see (c). Subfigure (d) shows the end of this channel in higher resolution. The quantum wells, i.e. the gain medium are well resolved.


Curriculum vitae

2018  East China Normal University as ECNU High-End Expert, China

1999  Visitor at the RIKEN-Institute Sendai, Japan

1995 - present: Senior researcher at MBI

1993-1995: Visiting professor at Georgia Tech Atlanta, USA

1986-1989: R&D group leader in a subcontract "Optical characterization of II-VI materials for IR quantum detector fabrication".

1984-1986: R&D work in a subcontract to "Carl Zeiss Jena" company to develop diode lasers for an IR diode laser spectrometer.

1981-1984: PhD student, Dr. rer. nat. in Physics, summa cum laude, Humboldt University, Berlin 1984 Dissertation: Study of the optical properties of n-Pb1-xSnxTe/p-Pb1-xSnxTe/p-PbTe-heterostructures by means of photoluminescence and injection-luminescence.

1977-1982: Physics studies, Diploma in Physics summa cum laude, Humboldt University, Berlin 1982 Thesis: Luminescence properties of lead salts for optical and electrical excitation.

MBI Publikationen

  1. Evidence for “dark charge” from photoluminescence measurements in wide InGaN quantum wells

    A. Bercha, W. Trzeciakowski, G. Muziol, J. W. Tomm, T. Suski

    Optics Express 31 (2023) 3227-3236
  2. Kinetics of excitation transfer from Cr2+ to Fe2+ ions in co-doped ZnSe

    P. Fuertjes, J. W. Tomm, U. Griebner, G. Steinmeyer, S. S. Balabanov, E. M. Gavrishchuk, T. Elsaesser

    Optics Letters 47 (2022) 2129-2131
  3. Stimulated emission at 1.54 μm from erbium/oxygen-doped silicon-based light-emitting diodes

    J. Hong, H. Wen, J. He, J. Liu, Y. Dan, J. W. Tomm, F. Yue, J. Chu, C. Duan

    Photonics Research 9 (2021) 714-721
  4. On the carrier kinetics in Al(In)GaN quantum wells stressed by high current densities

    J. Tomm, J. Ruschel, J. Glaab, F. Mahler, T. Kolbe, S. Einfeldt

    SPIE Proceedings Series 11705 (2021) 117050E/1-6
  5. From two- to three-dimensional model of heat flow in edge-emitting laser: theory, experiment and numerical tools

    M. Szymański, A. Kozłowska, J. Tomm, R. Huk, A. Maląg, M. Rusek

    Energies 14 (2021) 7006/1-14
  6. Catastrophic optical damage in semiconductor lasers: Physics and new results on InGaN high-power diode lasers

    M. Hempel, S. Dadgostar, J. Jiménez, R. Kernke, A. Gollhardt, J. W. Tomm

    Physica Status Solidi-Rapid Research Letters 16 (2021) 2100527/1-12
  7. Ascending Si diffusion into growing GaN nanowires from the SiC/Si substrate: up to the solubility limit and beyond

    V. G. Talalaev, J. W. Tomm, S. A. Kukushkin, A. V. Osipov, I. V. Shtrom, K. P. Kotlyar, F. Mahler, J. Schilling, R. R. Reznik, G. E. Cirlin

    Nanotechnology 31 (2020) 294003/1-8
  8. Infrared emission bands and thermal effects for 440-nm-emitting GaN-based laser diodes

    F. Mao, J. Hong, H. Wang, Y. Chen, C. Jing, P. Yang, J. W. Tomm, J. Chu, F. Yue

    AIP Advances 10 (2020) 055311/1-10
  9. In-situ spectroscopic analysis of the recombination kinetics in UVB LEDs during their operation

    J. Ruschel, J. Glaab, F. Mahler, T. Kolbe, S. Einfeldt, J. W. Tomm

    Applied Physics Letters 117 (2020) 121104/1-5
  10. Temperature‐dependent charge carrier diffusion in [0001] direction of GaN determined by luminescence evaluation of buried InGaN quantum wells

    C. Netzel, V. Hoffmann, J. W. Tomm, F. Mahler, S. Einfeldt, M. Weyers

    physica status solidi b 257 (2020) 2000016/1-7

Andere Publikationen


Juan Jiménez and Jens W. Tomm, "Spectroscopic Analysis of Optoelectronic Semiconductors", Springer Series in Optical Sciences Vol. 202 (Springer, 2016).

Jens W. Tomm and Juan Jiménez, "Quantum-Well Laser Array Packaging", Nanoscience and Technology Series (McGraw-Hill, 2007).