Publikationen des MBI
Publikationen
C2-P-2010.09
Defect imaging in laser diodes by mapping their near-infrared emission
Journal of Electronic Materials
39
(2010) 723-726
C2-P-2008.31
Gradual degradation of GaAs-based quantum well lasers, creation of defects, and generation of compressive strain
physica status solidi (a)
206
(2009) 1912-1915
C2-P-2008.05
Screening of high power laser diode bars in terms of stresses and thermal profiles
SPIE Proceedings
6876
(2008) 687619 (7 pages)
C2-P-1999.10
Near-field photocurrent spectroscopy in diode laser devices
J. Crystal Growth
210
(2000) 296-302
C2-P-2000.03
Selective excitation and photoinduced bleaching of defects in InAlGaAs/GaAs high-power diode lasers
Applied Physics Letters
77
(2000) 747-749
C2-P-2023.03
Recombination in polar InGaN/GaN LED structures with wide quantum wells
Physica Status Solidi-Rapid Research Letters
17
(2023) 2300027/1-6
C2-P-2003.15
Quantitative spectroscopic strain analysis of AlGaAs-based high-power diode laser devices
The European Physical Journal - Applied Physics
27
(2004) 461-464
C2-P-2003.01
Quantitative strain analysis in AlGaAs-based devices
Applied Physics Letters
82
(2003) 4193-4195
C2-P-2006.30
Quantum-Well Laser Array Packaging: Nanoscale Packaging Techniques
Nanoscience and Technology Series
McGraw-Hill (2006)
C2-P-2023.02
Mechanisms limiting the operation time of UVB Al(In)GaN quantum well light emitters
SPIE Proceedings Series
12440
(2023) 1244008/1-5
C2-P-2003.14
Properties of As+-implanted and annealed GaAs and InGaAs quantum-wells: structural and band-structure modifications
Journal of Applied Physics
95
(2004) 1122-1126
C2-P-1998.14
Spectroscopic measurement of packaging-induced strains in quantum-well laser diodes
Journal of Applied Physics
86
(1999) 1196-1201
C2-P-1998.04
Direct spectroscopic measurement of thermally induced strain in high-power optoelectronic devices
Appl. Phys. Lett.
73
(1998) 3908-3910
C2-P-1998.17
Direct spectroscopic measurement of packaging-induced strains in high-power laser diode arrays
SPIE Proceedings Series
3626
(1999) 138-147
C2-P-2001.09
Transient luminescence of dense InAs/GaAs quantum dot arrays
Physical Review B
67
(2003) 045326/1-8
C-P-1994.06
Stimulated emission in multi-valley lead salts with star degeneracy lifted by strain and magnetic fields
Inst. Phys. Conf. Ser.
144
(1995) 135-139
C2-P-2005.24
New characterization methods for semiconductor lasers
SPIE Proceedings
6013
(2005) 183-190
C2-P-2004.07
Transient thermal tuning properties of single emitters in actively cooled high-power cm-bar arrays
SPIE Proceedings
5336
(2004) 125-131
C2-P-2004.30
A novel light-emitting structure for the 3-5 µm spectral range
SPIE Proceedings
5722
(2005) 319-326
C2-P-1996.21
Near-field optical-beam-induced current spectroscopy as tool for analyzing aging processes in diode lasers
SPIE Proceedings
3001
(1997) 29-38