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C2-P-2010.09
Defect imaging in laser diodes by mapping their near-infrared emission

J. W. Tomm, M. Ziegler, H. Kissel, J. Biesenbach

Journal of Electronic Materials 39 (2010) 723-726

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C2-P-2008.31
Gradual degradation of GaAs-based quantum well lasers, creation of defects, and generation of compressive strain

J. W. Tomm, M. Ziegler, M. Oudart, J. Nagle, J. Jiménez

physica status solidi (a) 206 (2009) 1912-1915

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C2-P-2008.05
Screening of high power laser diode bars in terms of stresses and thermal profiles

J. W. Tomm, M. Ziegler, T. Q. Tien, F. Weik, P. Hennig, J. Meusel, H. Kissel, G. Seibold, J. Biesenbach, G. Groenninger, G. Herrmann, U. Strauß

SPIE Proceedings 6876 (2008) 687619 (7 pages)

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C2-P-1999.10
Near-field photocurrent spectroscopy in diode laser devices

J. W. Tomm, T. Günther, Ch. Lienau, A. Gerhardt, J. Donecker

J. Crystal Growth 210 (2000) 296-302

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C2-P-2000.03
Selective excitation and photoinduced bleaching of defects in InAlGaAs/GaAs high-power diode lasers

J. W. Tomm, A. Bärwolff, T. Elsaesser, J. Luft

Applied Physics Letters 77 (2000) 747-749

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C2-P-2023.03
Recombination in polar InGaN/GaN LED structures with wide quantum wells

J. W. Tomm, A. Bercha, G. Muzioł, J. Piprek, W. Trzeciakowski

Physica Status Solidi-Rapid Research Letters 17 (2023) 2300027/1-6

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C2-P-2003.15
Quantitative spectroscopic strain analysis of AlGaAs-based high-power diode laser devices

J. W. Tomm, A. Gerhard, M.L. Biermann, J.P. Holland

The European Physical Journal - Applied Physics 27 (2004) 461-464

C2-P-2003.01
Quantitative strain analysis in AlGaAs-based devices

J. W. Tomm, A. Gerhardt, R. Müller, M.L. Biermann, J.P. Holland, D. Lorenzen, E. Kaulfersch

Applied Physics Letters 82 (2003) 4193-4195

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C2-P-2006.30
Quantum-Well Laser Array Packaging: Nanoscale Packaging Techniques

J. W. Tomm, J. Jimenez

Nanoscience and Technology Series McGraw-Hill (2006)

C2-P-2023.02
Mechanisms limiting the operation time of UVB Al(In)GaN quantum well light emitters

J. W. Tomm, J. Ruschel, H. K. Cho, S. Einfeldt

SPIE Proceedings Series 12440 (2023) 1244008/1-5

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C2-P-2003.14
Properties of As+-implanted and annealed GaAs and InGaAs quantum-wells: structural and band-structure modifications

J. W. Tomm, V. Strelchuk, A. Gerhard, U. Zeimer, M. Zorn, H. Kissel, M. Weyers, J. Jiménez

Journal of Applied Physics 95 (2004) 1122-1126

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C2-P-1998.14
Spectroscopic measurement of packaging-induced strains in quantum-well laser diodes

J.W. Tomm, R. Müller, A. Bärwolff, T. Elsaesser, A. Gerhardt, J. Donecker, D. Lorenzen, F.X. Daiminger, S. Weiß, M. Hutter, E. Kaulfersch, H. Reichl

Journal of Applied Physics 86 (1999) 1196-1201

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C2-P-1998.04
Direct spectroscopic measurement of thermally induced strain in high-power optoelectronic devices

J.W. Tomm, R. Müller, A. Bärwolff, T. Elsaesser, D. Lorenzen, F.X. Daiminger, A. Gerhardt, J. Donecker

Appl. Phys. Lett. 73 (1998) 3908-3910

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C2-P-1998.17
Direct spectroscopic measurement of packaging-induced strains in high-power laser diode arrays

J.W. Tomm, R. Müller, A. Bärwolff, M. Neuner, T. Elsaesser, D. Lorenzen, F.X. Daiminger, A. Gerhardt, J. Donecker

SPIE Proceedings Series 3626 (1999) 138-147

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C2-P-2001.09
Transient luminescence of dense InAs/GaAs quantum dot arrays

J.W. Tomm, T. Elsaesser, Yu I. Mazur, H. Kissel, G.G. Tarasov, Z.Ya. Zhuchenko, W.T. Masselink

Physical Review B 67 (2003) 045326/1-8

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C-P-1994.06
Stimulated emission in multi-valley lead salts with star degeneracy lifted by strain and magnetic fields

J.W. Tomm, K.H. Herrmann, S. Haertle, T. Kelz, M. Mocker, T. Elsaesser, R. Klann, V.B. Novikov, V.G. Talalaev, V.E. Todorovskii, H. Böttner

Inst. Phys. Conf. Ser. 144 (1995) 135-139

C2-P-2005.24
New characterization methods for semiconductor lasers

J.W. Tomm, F. Weik, A. Kozlowska, M. Latoszek, M. Bugajski, M. Zbroszczykc

SPIE Proceedings 6013 (2005) 183-190

C2-P-2004.07
Transient thermal tuning properties of single emitters in actively cooled high-power cm-bar arrays

J.W. Tomm, F. Weik, A. Gerhardt, T.Q. Tran, J. Biesenbach, H. Müntz, G. Seibold

SPIE Proceedings 5336 (2004) 125-131

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C2-P-2004.30
A novel light-emitting structure for the 3-5 µm spectral range

J.W. Tomm, F. Weik, R. Glatthaar, U. Vetter, J. Nurnus, A. Lambrecht, B. Spellenberg, M. Bassler, M. Behringer, J. Luft

SPIE Proceedings 5722 (2005) 319-326

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C2-P-1996.21
Near-field optical-beam-induced current spectroscopy as tool for analyzing aging processes in diode lasers

J.W. Tomm, A. Richter, C. Lienau, T. Elsaesser, J. Luft

SPIE Proceedings 3001 (1997) 29-38

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